Magneto-optical study on exciton screening in p-type AlxGa12xAs/InyGa12yAs quantum wells
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Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa12xAs coupled quantum wells
We report on the magneto-optical study of the spatially separated electron and hole layers in GaAs/AlxGa12xAs coupled quantum wells at low temperatures T>50 mK and high magnetic fields B <16 T. At high magnetic fields cusps are observed in the energy and intensity of the indirect ~interwell! exciton photoluminescence. We tentatively attribute these to the commensurability effects of the magneto...
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The kinetics of indirect photoluminescence of GaAs/AlxGa12xAs double quantum wells, characterized by a random potential with a large amplitude ~the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton! in magnetic fields B<12 T at low temperatures T>1.3 K is investigated. It is found that the indirectrecombination time increases with the magneti...
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Photoluminescence ~PL! kinetics of long-lifetime indirect excitons in a GaAs/AlxGa12xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<T<15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In parti...
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A theory of far-infrared ~FIR! magneto-optical intraband s→p transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained InxGa12xAs/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ...
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